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TYPICAL PERFORMANCE CURVES
APT50GN60BDQ2 APT50GN60BD_SDQ2(G) APT50GN60SDQ2 APT50GN60BDQ2(G) APT50GN60SDQ2(G) 600V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses.
(B)
TO -2 47
D3PAK
(S)
C G E
* 600V Field Stop
* * * * Trench Gate: Low VCE(on) Easy Paralleling 6s Short Circuit Capability 175C Rated
G
C
E
C G E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current
8
All Ratings: TC = 25C unless otherwise specified.
APT50GN60BD_SDQ2(G) UNIT Volts
600 30
@ TC = 25C
107 64 150 150A @ 600V 366 -55 to 175
C Watts Amps
Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
@ TC = 175C
Switching Safe Operating Area @ TJ = 175C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA) Gate Threshold Voltage (VCE = VGE, I C = 800A, Tj = 25C) MIN TYP MAX Units
600 5.0 1.05 5.8 1.45 1.7 50
2
6.5 1.85
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125C)
I CES I GES RG(int)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C)
2
A nA
7-2009 050-7613 Rev C
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V) Intergrated Gate Resistor
TBD 600 N/A
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA SCSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT50GN60BD_SDQ2(G)
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 300V I C = 50A TJ = 175C, R G = 4.3
7,
MIN
TYP
MAX
UNIT
3200 125 100 9.0 325 25 175
VGE = nC V pF
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area
15V, L = 100H,VCE = 600V VCC = 360V, VGE = 15V, TJ = 150C, R G = 4.3 7 Inductive Switching (25C) VCC = 400V VGE = 15V I C = 50A
150 6 20 25 230 100 1185 1275 1565 20 25 260 140 1205 1850 2125
A
Short Circuit Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
4 5
s
ns
RG = 4.3 7 TJ = +25C
Turn-on Switching Energy (Diode) Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
44 6
J
Inductive Switching (125C) VCC = 400V VGE = 15V I C = 50A RG = 4.3 7
55
ns
Turn-on Switching Energy (Diode) Turn-off Switching Energy
66
TJ = +125C
J
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
.41 .67 5.9
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.)
7-2009 Rev C 050-7613
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452) 8 Continuous current limited by package lead temperature.
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
160
V
GE
APT50GN60BD_SDQ2(G)
200 180 IC, COLLECTOR CURRENT (A) 160 140 120 100 80 60 9V 40 20 0 8V 7V 0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 11V 10V 15V 13V 12V
= 15V
140 IC, COLLECTOR CURRENT (A) 120 100 80 TJ = 25C 60 40 20 0 TJ = -55C TJ = 175C TJ = 125C
0 1 2 3 4 5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
FIGURE 1, Output Characteristics(TJ = 25C) 160 140 IC, COLLECTOR CURRENT (A) 120 TJ = 125C 100 TJ = 175C 80 60 40 20 0 0 2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
FIGURE 2, Output Characteristics (TJ = 125C) 16 VGE, GATE-TO-EMITTER VOLTAGE (V)
I = 50A C T = 25C
J
TJ = -55C TJ = 25C
14 12 10 8 6 4 2 0 0
VCE = 120V VCE = 300V VCE =480V
50
100 150 200 250 300 350 400 GATE CHARGE (nC) FIGURE 4, Gate Charge
3.0 IC = 100A 2.5 2.0 1.5 1.0 0.5 0
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.5
3.0 2.5 IC = 100A 2.0 IC = 50A 1.5 1.0 0.5 0 IC = 25A
IC = 50A IC = 25A
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.10
8
25 50 75 100 125 150 175 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 140
0
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
1.05
IC, DC COLLECTOR CURRENT(A)
120 100 80 60 40 20 0 -50 -25 7-2009 050-7613 Rev C
Lead Temperature Limited
1.00
0.95
0.90 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature
APT50GN60BD_SDQ2(G)
25 td(ON), TURN-ON DELAY TIME (ns) VGE = 15V 20 td (OFF), TURN-OFF DELAY TIME (ns) 350 300 250 200 150 100 50 VCE = 400V RG = 4.3
L = 100 H VGE =15V,TJ=125C VGE =15V,TJ=25C
15
10
5 VCE = 400V
TJ = 25C, 125C RG = 4.3 L = 100 H
30 50 70 90 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 120
RG = 4.3, L = 100H, VCE = 400V
0
10
30 50 70 90 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 160 140 120
TJ = 125C, VGE = 15V RG = 4.3, L = 100H, VCE = 400V
0
10
100 tr, RISE TIME (ns) tf, FALL TIME (ns)
80
100 80 60 40
TJ = 25C, VGE = 15V
60
40
20
TJ = 25 or 125C,VGE = 15V
20 10 30 50 70 90 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 4000 EOFF, TURN OFF ENERGY LOSS (J) 3500 3000 2500 2000 1500
TJ = 25C
V = 400V CE V = +15V GE R = 4.3
G
10 30 50 70 90 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 6000 EON2, TURN ON ENERGY LOSS (J)
V = 400V CE V = +15V GE R = 4.3
G
0
0
5000
TJ = 125C
TJ = 125C
4000
3000
2000
1000 500 10 30 50 70 90 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 6000
V = 400V CE V = +15V GE R = 4.3
G
1000
TJ = 25C
10 30 50 70 90 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 16000 SWITCHING ENERGY LOSSES (J) 14000 12000 10000 8000 6000
Eon2,50A Eoff,100A
V = 400V CE V = +15V GE T = 125C
J
0
0
SWITCHING ENERGY LOSSES (J)
Eon2,100A
Eon2,100A
5000
4000
Eoff,100A Eoff,50A
3000
7-2009
2000
Eon2,50A
4000 2000 0 0
Eoff,50A Eoff,25A Eon2,25A
1000
Eoff,25A Eon2,25A
Rev C
050-7613
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
0
TYPICAL PERFORMANCE CURVES
5,000 IC, COLLECTOR CURRENT (A) Cies 160 140 120 100 80 60 40 20 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 10
APT50GN60BD_SDQ2(G)
C, CAPACITANCE ( F)
1,000 500
P
100 50
C0es Cres
100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0
0.45 0.40 ZJC, THERMAL IMPEDANCE (C/W) D = 0.9 0.35 0.30 0.25 0.5 0.20 0.15 0.10 0.05 0 10-5 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10-4 1.0 0.1 0.05 0.3 SINGLE PULSE
Note:
0.7
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
110 FMAX, OPERATING FREQUENCY (kHz)
50
F max = min (f max, f max2) 0.05 f max1 = t d(on) + tr + td(off) + tf
T = 125C J T = 75C C D = 50 % = 400V V CE R = 4.3
G
f max2 = Pdiss =
10 6
Pdiss - P cond E on2 + E off TJ - T C R JC
20 30 40 50 60 70 80 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
10
050-7613
Rev C
7-2009
APT50GN60BD_SDQ2(G)
APT40DQ60
10%
Gate Voltage TJ = 125C
td(on) Collector Current
V CC
IC
V CE
tr 5%
90%
10%
5% Collector Voltage
A D.U.T.
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
Gate Voltage td(off) 90% Collector Voltage tf 10%
TJ = 125C
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
050-7613
Rev C
7-2009
TYPICAL PERFORMANCE CURVES
APT50GN60BD_SDQ2(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF (AV) IF (RMS) IFSM Characteristic / Test Conditions Maximum Average Forward Current (TC = 111C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms)
All Ratings: TC = 25C unless otherwise specified.
APT50GN60BD_SDQ2(G) UNIT
40 63 320
Amps
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions IF = 50A VF Forward Voltage IF = 100A IF = 50A, TJ = 125C MIN TYP MAX UNIT
2.2 2.7 1.8
MIN TYP MAX UNIT ns Volts
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 40A, diF/dt = -1000A/s VR = 400V, TC = 125C IF = 40A, diF/dt = -200A/s VR = 400V, TC = 125C IF = 40A, diF/dt = -200A/s VR = 400V, TC = 25C
22 25 35 3 160 480 6 85 920 20 -
-
nC Amps ns nC Amps ns nC Amps
0.70 ZJC, THERMAL IMPEDANCE (C/W) 0.60 0.50 0.40 0.5 0.30 0.20 0.10 0 10-5 0.3
Note:
D = 0.9
0.7
PDM
t1 t2
0.1 0.05 10-4
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
050-7613
Rev C
7-2009
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 24. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
APT50GN60BD_SDQ2(G)
120 trr, REVERSE RECOVERY TIME (ns) 100 80 60 TJ = 125C 40 20 0 TJ = 175C TJ = 25C TJ = -55C 0.5 1 1.5 2 2.5 3 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 25. Forward Current vs. Forward Voltage 1400 Qrr, REVERSE RECOVERY CHARGE (nC)
T = 125C J V = 400V
R
180 160 140 40A 120 80A
T = 125C J V = 400V
R
IF, FORWARD CURRENT (A)
20A 100 80 60 40 20
0
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 26. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 25
T = 125C J V = 400V
R
0
1200 80A 1000 800 600 400 20A 200 0
80A
20
15
40A
10 20A 5
40A
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 27. Reverse Recovery Charge vs. Current Rate of Change 1.4 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.2 1.0 IRRM 0.8 0.6 trr 0.4 0.2 0.0 Qrr trr Qrr
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Current vs. Current Rate of Change 80 70 60 IF(AV) (A) 50 40 30 20 10
Duty cycle = 0.5 T = 175C
J
0
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 29. Dynamic Parameters vs. Junction Temperature 200 180 CJ, JUNCTION CAPACITANCE (pF) 160 140 120 100 80 60 40 20 10 100 200 VR, REVERSE VOLTAGE (V) Figure 31. Junction Capacitance vs. Reverse Voltage 0 1
0
75 100 125 150 175 Case Temperature (C) Figure 30. Maximum Average Forward Current vs. CaseTemperature
0
25
50
050-7613
Rev C
7-2009
TYPICAL PERFORMANCE CURVES
Vr +18V 0V D.U.T. 30H diF /dt Adjust
APT40GT60BR
APT50GN60BD_SDQ2(G)
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 32. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
0.25 IRRM
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
5
Figure 33, Diode Reverse Recovery Waveform and Definitions
TO-247 Package Outline
Collector (Cathode) (Heat Sink)
D PAK Package Outline
e3 SAC: Tin, Silver, Copper
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 1.04 (.041) 1.15(.045) 13.41 (.528) 13.51(.532)
3
e1 SAC: Tin, Silver, Copper
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector (Cathode)
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99(.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.}
19.81 (.780) 20.32 (.800)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)
Gate Collector (Cathode) Emitter (Anode)
Heat Sink (Collector) and Leads are Plated
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7613
Rev C
7-2009
2.21 (.087) 2.59 (.102)
Emitter (Anode) Collector (Cathode) Gate Dimensions in Millimeters (Inches)

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